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    • 专利摘要:
    An optical filter having a pass band that at least partially overlaps with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack on a first side of a substrate, the filter stack comprising alternating layers of hydrogenated silicon and layers of a material with a lower refractive index. The optical filter has a degree of transmission of more than 90% within the transmission range.
    公开号:AT17188U1
    申请号:TGM50067/2020U
    申请日:2013-07-16
    公开日:2021-08-15
    发明作者:Denise Hendrix Karen；Bradley Richard；Grigonis Marius；Ockenfuss Georg
    申请人:Viavi Solutions Inc；
    IPC主号:
    专利说明:

    description
    OPTICAL FILTER AND SENSOR SYSTEM
    TECHNICAL FIELD OF THE INVENTION
    The present invention relates to optical filters and sensor systems including optical filters. In particular, the present invention relates to optical filters comprising hydrogenated silicon layers and sensor systems comprising such optical filters.
    GENERAL STATE OF THE ART
    In a typical gesture recognition system, a light source emits near infrared light toward a user. A three-dimensional (3D) image sensor detects the emitted light that is reflected from the user to provide a 3D image of the user. A processing system then analyzes the 3-D image to recognize a gesture made by the user.
    An optical filter, in particular a band pass filter, is used to pass the emitted light to the 3D image sensor while essentially blocking ambient light. In other words, the optical filter is used to shield ambient light. Therefore, an optical filter which has a narrow pass band in the near infrared wavelength range, i.e. H. 800 nm to 1100 nm, is required. Furthermore, the optical filter must have a high degree of transmittance within the transmission range and a high degree of blocking outside the transmission range.
    Conventionally, the optical filter comprises a filter stack and a blocking stack coated on opposite surfaces of a substrate. Each of the stacks is made up of alternating high refractive index layers and low refractive index layers. In general, different oxides such as TiO2, Nb2Os, Ta2Os, SiO2, and mixtures thereof are used for the high refractive index layers and the low refractive index layers. For example, some conventional optical filters include a TiO »/ SiO» filter stack and a Ta »Os / SiO» blocking stack in which the high refractive index layers are TiO »and Ta2zOs, respectively, and the low refractive index layers are SiO» .
    In a first conventional optical filter, which is designed to pass light in a wavelength range of 829 nm to 859 nm over an incidence angle range of 0 ° to 30 °, the filter stack comprises 71 layers, the blocking stack comprises 140 layers and is the Total coating thickness about 24 µm. The transmission spectra 100 and 101 at angles of incidence of 0 ° and 30 ° for this optical filter are shown in FIG. 1 applied. In a second conventional optical filter designed to transmit light with a wavelength of 825 nm over an angle of incidence range of 0 ° to 20 °, the filter stack comprises 43 layers, the blocking stack comprises 82 layers, and the total coating thickness is about 14 µm. The transmission spectra 200 and 201 at angles of incidence of 0 ° and 20 ° for this optical filter are shown in FIG. 2 applied. In a third conventional optical filter, which is designed to pass light in a wavelength range from 845 nm to 865 nm over an incidence angle range from 0 ° to 24 °, the filter stack comprises 77 layers, the blocking stack comprises 148 layers and the total coating thickness is approximately 26 around. The transmission spectra 300 and 301 at angles of incidence of 0 ° and 24 ° for this optical filter are shown in FIG. 3 applied.
    With reference to FIG. 1-3, the first, second, and third conventional optical filters generally have a high transmittance within the passband and a high degree of blockage outside the passband. However, the mean wavelength of the pass band experiences a relatively large shift when the angle of incidence changes. Consequently, the transmission range must be relatively wide so that light is above the required
    Angle of incidence range is accepted, thereby increasing the amount of ambient light that is transmitted and reducing the signal-to-noise ratio of systems incorporating these conventional optical filters. Furthermore, the large number of layers in the filter stacks and blocking stacks increases the effort and the coating time which are required in the manufacture of these conventional optical filters. The large total coating thickness also makes it difficult to structure these conventional optical filters, e.g. B. by photolithography.
    In order to improve the performance of the optical filter in the gesture recognition system, it would be desirable to reduce the number of layers, the total coating thickness and the shift in the central wavelength as the angle of incidence changes. One approach is to use a material that has a higher index of refraction than conventional oxides over the wavelength range from 800 nm to 1100 nm for the high refractive index layers. In addition to having a higher index of refraction, the material must also have a low extinction coefficient over the wavelength range from 800 nm to 1100 nm in order to provide a high degree of transmittance within the transmission range.
    The use of hydrogenated silicon (Si: H) for layers with a high refractive index in optical filters is described by Lairson et al. in an article entitled "Reduced Angle-Shift Infrared Bandpass Filter Coatings" (SPIE Conference Report, 2007, Vol. 6545, Pages 65451C1 65451C-5) and by Gibbons et al. published in an article entitled "Development and Implementation of a Hydrogenated a-Si Reactive Sputter Deposition Process" (Conference Report of the Annual Technical Conference, Society of Vacuum Coaters, 2007, Vol. 50, pages 327-330). Lairson et al. disclose a hydrogenated silicon material which has a refractive index of 3.2 at a wavelength of 1500 nm and an extinction coefficient of less than 0.001 at wavelengths greater than 1000 nm. Gibbons et al. disclose a hydrogenated silicon material made by alternating current sputtering (AC sputtering) which has a refractive index of 3.2 at a wavelength of 830 nm and an extinction coefficient of 0.0005 at a wavelength of 830 nm. Unfortunately, these hydrogenated silicon materials do not have a reasonably low extinction coefficient over the wavelength range of 800 nm to 1100 nm.
    SUMMARY OF THE INVENTION
    Accordingly, the present invention relates to an optical filter having a transmission region which at least partially overlaps a wavelength range of 800 nm to 1100 nm, comprising: a filter stack comprising: a plurality of hydrogenated silicon layers which extend over the wavelength range of 800 nm nm to 1100 nm each have a refractive index greater than 3 and an extinction coefficient of less than 0.0005 over the wavelength range from 800 nm to 1100 nm; and a plurality of lower refractive index layers each having a refractive index of less than 3 over the wavelength range from 800 nm to 1100 nm, alternately stacked with the plurality of hydrogenated silicon layers.
    The present invention also relates to a sensor system including: a light source for emitting light having an emission wavelength in a wavelength range from 800 nm to 1100 nm; an optical filter having a transmission range comprising the emission wavelength and at least partially overlapping the wavelength range of 800 nm to 1100 nm, arranged to receive the emitted light, for transmitting the emitted light while substantially blocking ambient light, wherein The optical filter includes: a filter stack comprising: a plurality of hydrogenated silicon layers each having a refractive index of greater than 3 over the wavelength range from 800 nm to 1100 nm and an extinction coefficient of less than in each case over the wavelength range from 800 nm to 1100 nm 0.0005; and a plurality of lower refractive index layers each having a refractive index of less than 3 over the wavelength range from 800 nm to 1100 nm, alternately stacked with the plurality of hydrogenated silicon layers; and a sensor arranged to detect the emitted light after
    Passing through the optical filter to detect the emitted light.
    BRIEF DESCRIPTION OF THE FIGURES
    The present invention is described in more detail with reference to the accompanying figures, wherein:
    FIG. 1 is a plot of transmission spectra at angles of incidence of 0 ° and 30 ° for a first conventional optical filter;
    FIG. Figure 2 is a plot of transmission spectra at angles of incidence of 0 ° and 20 ° for a second conventional optical filter;
    FIG. 3 is a plot of transmission spectra at angles of incidence of 0 ° and 24 ° for a third conventional optical filter;
    FIG. 4 is a schematic illustration of a sputter deposition system;
    FIG. 5A is a plot of transmission spectra for 1500 nm thick silicon layers deposited in the presence and absence of hydrogen;
    FIG. 5B is a plot of the absorption edge wavelength at a transmittance of 50% versus the hydrogen flow rate for hydrogenated silicon layers (Si: H layers) before and after an annealing step;
    FIG. 5C is a plot of refractive index at wavelengths from 800 nm to 1120 nm versus hydrogen flow rate for hydrogenated silicon layers;
    FIG. 5D is a plot of the absorption coefficient at wavelengths from 800 nm to 880 nm versus hydrogen flow rate for hydrogenated silicon layers;
    FIG. 6 is a schematic illustration of a cross section of an optical filter in accordance with the present invention;
    FIG. 7A is a table showing the characteristics of the first conventional optical filter of FIG. 1 compares and a first exemplary optical filter in accordance with the present invention;
    FIG. 7B is a table listing layer counts, materials, and thicknesses for the anti-reflective (AR) coating of the first exemplary optical filter;
    FIG. 76 is a table listing layer counts, materials, and thicknesses for the filter stack of the first exemplary optical filter;
    FIG. 7D is a plot of transmission spectra at angles of incidence of 0 ° and 30 ° for the first exemplary optical filter;
    FIG. 7E is a plot of transmission spectra at angles of incidence of 0 ° and 30 ° for an optical filter that is analogous to the first exemplary optical filter but includes a Si / SiO> filter stack;
    FIG. 8A is a table showing the characteristics of the second conventional optical filter of FIG. Figure 2 compares and a second exemplary optical filter in accordance with the present invention;
    FIG. 8B is a table listing layer counts, materials, and thicknesses for the filter stack of the second exemplary optical filter;
    FIG. 8C is a plot of transmission spectra at angles of incidence of 0 ° and 20 ° for the second exemplary optical filter;
    FIG. 8D is a plot of transmission spectra at angles of incidence of 0 ° and 20 ° for an optical filter that is analogous to the second exemplary optical filter but includes a Si / SiO> filter stack;
    FIG. 9A is a table listing layer counts, materials, and thicknesses for the filter stack of a third exemplary optical filter in accordance with the present invention;
    FIG. 9B is a plot of transmission spectra at angles of incidence of 0 ° and 40 ° for the third exemplary optical filter; and
    FIG. 10 is a block diagram of a sensor system in accordance with the present invention.
    DETAILED DESCRIPTION OF THE INVENTION
    The present invention provides an optical filter comprising hydrogenated silicon (Si: H) layers which is particularly suitable for use in a sensor system such as a proximity sensor system, a three-dimensional (3D) imaging system, or a gesture recognition system.
    The optical filter of the present invention utilizes an improved hydrated silicon material which is capable of operating over a wavelength range of 800 nm to 1100 nm, i.e., about 100 nm. H. in the near-infrared wavelength range, has both a high refractive index and a low absorption coefficient. Typically the hydrogenated silicon material is amorphous. The hydrogenated silicon material is preferably produced by a pulsed direct current sputtering method (DC sputtering). A sputter deposition system suitable for making the hydrogenated silicon material is described in U.S. Patent No. 8,163,144 to Tilsch et al., Issued April 24, 2012, which is incorporated herein by reference.
    With reference to FIG. 4, a typical sputter deposition system 400 used to fabricate the hydrated silicon material includes a vacuum chamber 410, a substrate 420, a cathode 430, a cathode power supply 440, an anode 450, a Plasma Activation Source (PAS) 460, and a PAS power supply 470. The cathode 430 is powered by the cathode power supply 440, which is a pulsed DC power supply. The PAS 460 is powered by the PAS power supply 470, which is a radio frequency (RF) power supply. The cathode 430 includes a silicon target 431 that is sputtered in the presence of hydrogen (H2) and an inert gas such as argon to layer the hydrogenated silicon material on the substrate 420. The inert gas is introduced into the vacuum chamber 410 through the anode 450 and the PAS 460. Alternatively, the walls of the vacuum chamber 410 can serve as an anode and the noble gas can be introduced at a different location.
    Hydrogen is introduced into the vacuum chamber 410 through the PAS 460, which is used to activate the hydrogen. Activated hydrogen is more chemically reactive and is therefore more likely to form Si-H bonds, which are believed to be responsible for the optical properties of the hydrogenated silicon material. The PAS 460 is in close proximity to the cathode 430, which allows the PAS plasma and the cathode plasma to overlap. It is believed that both atomic and molecular types of activated hydrogen are present in the plasmas. By using the PAS 460, the hydrogenated silicon layer can be deposited with a relatively high deposition rate with a relatively low hydrogen content. Typically, the hydrogenated silicon layer is deposited with a deposition rate of 0.05 nm / s to 1.2 nm / s, preferably with a deposition rate of about 0.8 nm / s. Alternatively, only the cathode plasma can be used for hydrogen activation.
    The optical properties of the hydrogenated silicon material depend primarily on the hydrogen content in the vacuum chamber 410 and thus on the hydrogen flow rate
    away. However, they are also influenced by other parameters such as the flow rate of the noble gas, the PAS power level, the cathode power level and the deposition rate.
    FIG. 5A shows the transmission spectra 500 and 501 for 1500 nm thick silicon layers deposited in the presence of hydrogen at a hydrogen flow rate of 139 sccm and in the absence of hydrogen, respectively. The silicon layer deposited in the presence of hydrogen, i.e. H. the hydrogenated silicon layer has a significantly higher degree of transmittance over the wavelength range from 800 nm to 1100 nm.
    FIG. 5B shows the curves 510 and 511 of the absorption edge wavelength at a degree of transmission of 50% above the hydrogen flow rate for hydrogenated silicon layers before and after an annealing step, respectively. For the hydrogenated silicon layers as deposited, the absorption edge wavelength decreases as the hydrogen flow rate increases. In general, the absorption edge wavelength varies roughly logarithmically with the hydrogen flow rate. The absorption edge wavelength is further reduced by the annealing step, which was carried out at a temperature of about 300 ° C. for about 60 minutes. Typically, when performing an optional post-coating annealing step, the hydrogenated silicon layers are annealed at a temperature of up to 350 ° C for up to 120 minutes, preferably at a temperature of 250 ° C to 350 ° C for 30 to 90 minutes. In some cases, more than one annealing step can be performed.
    Thus, the absorption edge wavelength of the hydrogenated silicon material can be tuned by adjusting the hydrogen flow rate and optionally by annealing. In the same way, the refractive index and the absorption coefficient of the hydrogenated silicon material can also be adjusted by adjusting the hydrogen flow rate and optionally by annealing. Typically, the hydrogenated silicon layers are deposited with a hydrogen flow rate of greater than 80 sccm, preferably a hydrogen flow rate of about 80 sccm. It should be noted, however, that the hydrogen content associated with this flow rate depends on the pumping speed of the vacuum system.
    FIG. 5C shows a plot of the refractive index at wavelengths from 800 nm to 1120 nm versus the hydrogen flow rate for hydrogenated silicon layers as deposited. The refractive index decreases as the hydrogen flow rate increases. In general, the refractive index varies roughly linearly with the hydrogen flow rate. In particular, the refractive index of the hydrogenated silicon layer, which is produced with a hydrogen flow rate of 80 sccm, is greater than 3.55 over the wavelength range from 800 nm to 1120 nm.
    FIG. 5D shows a plot of an absorption coefficient at wavelengths from 800 nm to 880 nm versus the hydrogen flow rate for hydrogenated silicon layers as deposited (the absorption coefficient is less than 0.0001 at wavelengths from 920 nm to 1120 nm). The absorption coefficient decreases as the hydrogen flow rate increases. In general, the absorption coefficient varies roughly exponentially with the hydrogen flow rate. In particular, the absorption coefficient of the hydrogenated silicon layer, which is produced with a hydrogen flow rate of 80 sccm, is less than 0.0004 over the wavelength range from 800 nm to 1120 nm.
    The improved hydrogenated silicon material tuned to have suitable optical properties is used in the optical filter of the present invention. With reference to FIG. 6, the optical filter 600 comprises a filter stack 610 arranged on a first surface of a substrate 620. In most cases, the substrate 620 will be a free-standing substrate, typically a glass substrate, e.g. B. a Borofloat glass substrate.
    Alternatively, the substrate 620 can be a sensor or other device. When the substrate 620 is a free-standing substrate, an anti-reflective (AR) coating 630 is often placed on a second surface of the substrate 620 opposite the first surface. Typical
    typically the AR coating 630 is a multilayer interference coating, e.g. B. a Ta2O5 / SiO2 coating. Typically, the AR coating 630 also has a thickness of 0.1 µm to 1 µm.
    The filter stack 610 includes a plurality of hydrogenated silicon layers 611 serving as higher refractive index layers and a plurality of lower refractive index layers 612 that are alternately stacked. Typically, the filter stack 610 consists of a plurality of hydrogenated silicon layers 611 and a plurality of lower refractive index layers 612 that are stacked in a sequence of (H / L) », (H / L)« H, or L (H / L) - . Typically, the filter stack 610 comprises a total of 10 to 100 layers; H. The hydrogenated silicon layers 611 are comprised of the improved hydrogenated silicon material that is tuned to have an index of refraction greater than 3 and an extinction coefficient less than 0.0005 over the wavelength range of 800 nm to 1100 nm. Preferably, the hydrogenated silicon material has a refractive index greater than 3.5, e.g. B. an index of refraction greater than 3.64, i.e. H. about 3.6 at a wavelength of 830 nm. A higher index of refraction is usually desirable. In general, however, the hydrogenated silicon material has an index of refraction of less than 4.5 over the wavelength range from 800 nm to 1100 nm. The hydrogenated silicon material preferably has an extinction coefficient of less than 0.0004 over the wavelength range from 800 nm to 1100 nm, and particularly preferably an extinction coefficient of less than 0.0003 over the wavelength range from 800 nm to 1100 nm. Typically, the hydrogenated silicon material has an extinction coefficient of greater than 0.01 at wavelengths of less than 600 nm, preferably an extinction coefficient of greater than 0.05 for wavelengths of less than 650 nm. Since the hydrogenated silicon material at wavelengths of less than 600 nm is relatively strongly absorbing, an additional blocking stack in the optical filter 600 is not necessary. The layers with lower refractive index 612 consist of a material with a lower refractive index, which over the wavelength range from 800 nm to 1100 nm has a refractive index that is lower than that of the hydrogenated silicon layers 611. Typically, the material with lower refractive index over the Wavelength range from 800 nm to 1100 nm has a refractive index of less than 3. The material with a lower refractive index preferably has a refractive index of less than 2.5 over the wavelength range from 800 nm to 1100 nm, and particularly preferably a refractive index of less than 2 over the wavelength range from 800 nm to 1100 nm is usually desirable for the lower refractive index layers 612 in order to increase the width of the blocking wavelength range; H. increase the stopband, of the optical filter 600, which enables the same degree of blocking to be achieved with fewer layers in the filter stack 610. In some cases, however, a slightly higher index of refraction, still lower than that of hydrogenated silicon layers 611, may be desirable to compensate for the shift in the mean wavelength as the angle of incidence changes, e.g. H. the angular displacement of the optical filter 600 to reduce. In most cases the lower refractive index material is a dielectric material, typically an oxide. Suitable lower refractive index materials include silicon dioxide (SiO2), aluminum oxide (Al »Os), titanium dioxide (TiO2), niobium pentoxide (Nb2Os), tantalum pentoxide (Ta2Os) and mixtures thereof; H. mixed oxides.
    The hydrogenated silicon material preferably has an extinction coefficient of less than 0.0004 over the wavelength range from 800 nm to 1100 nm, and particularly preferably an extinction coefficient of less than 0.0003 over the wavelength range from 800 nm to 1100 nm. Typically, the hydrogenated silicon material has an extinction coefficient of greater than 0.01 at wavelengths of less than 600 nm, preferably an extinction coefficient of greater than 0.05 for wavelengths of less than 650 nm. Since the hydrogenated silicon material at wavelengths of less than 600 nm is relatively strongly absorbing, an additional blocking stack in the optical filter 600 is not necessary.
    The layers with lower refractive index 612 consist of a material with a lower refractive index, which over the wavelength range from 800 nm to 1100 nm has a refractive index that is lower than that of the hydrogenated silicon layers 611. Typically, the material with lower refractive index over the Wavelength range from 800 nm to 1100 nm has a refractive index of less than 3. The material with a lower refractive index preferably has a refractive index of less than 2.5 over the wavelength range from 800 nm to 1100 nm, and particularly preferably a refractive index of less than 2 over the wavelength range from 800 nm to 1100 nm.
    A lower index of refraction is usually desirable for the lower index of refraction layers 612 in order to increase the width of the blocking wavelength range; H. increase the stopband, of the optical filter 600, which enables the same degree of blocking to be achieved with fewer layers in the filter stack 610. In some cases, however, a slightly higher index of refraction, still lower than that of hydrogenated silicon layers 611, may be desirable to compensate for the shift in the mean wavelength as the angle of incidence changes, e.g. H. the angular displacement of the optical filter 600 to reduce.
    In most cases the lower refractive index material is a dielectric material, typically an oxide. Suitable lower refractive index materials include silicon dioxide (SiO2), aluminum oxide (Al »Os), titanium dioxide (TiO2), niobium pentoxide (Nb2Os), tantalum pentoxide (Ta2Os) and mixtures thereof; H. mixed oxides.
    The optical filter 600 can be fabricated using a sputtering process.
    Typically, the substrate 620 is provided in the vacuum chamber of a sputter deposition system similar to that shown in FIG. 4 is similar to those illustrated. The hydrogenated silicon layers 611 and the lower refractive index layers 612 are then deposited sequentially on the first surface of the substrate 620 to form the filter stack 610 as a multilayer coating. Typically, the hydrogenated silicon layers 611 are deposited by pulsed DC sputtering from a silicon target in the presence of hydrogen, as previously described. Typically, the lower refractive index layers 612 are also formed by pulsed DC sputtering from one or more suitable metal targets, e.g. B. a silicon target, an aluminum target, a titanium target, a niobium target and / or a tantalum target, deposited in the presence of oxygen. The AR coating 630 is deposited on the second surface of the substrate 620 in a similar manner. It should be noted that the order in which the filter stack 610 and the AR coating 630 are formed is usually not important. The optical filter 600 is an interference filter that has a pass band that at least partially overlaps the wavelength range from 800 nm to 1100 nm. The transmission range can encompass the entire wavelength range from 800 nm to 1100 nm or, more typically, only part of the wavelength range. The transmission range can be restricted to part or all of the wavelength range from 800 nm to 1100 nm or can extend beyond the wavelength range. The optical filter 600 preferably has a degree of transmission within the transmission range of more than 90% over the wavelength range from 800 nm to 1100 nm. The optical filter 600 provides blocking outside of the passband, i. H. a stop band, on one or both sides of the pass band, typically over a wavelength range from 400 nm to 1100 nm, preferably over a wavelength range from 300 nm to 1100 nm. The optical filter 600 preferably has a degree of blocking outside the transmission range of greater than OD2 over the wavelength range from 400 nm to 1100 nm, particularly preferably a degree of blocking of greater than OD3 over the wavelength range from 300 nm to 1100 nm.
    In some cases, the optical filter 600 is a long-wave pass cut-off filter, and the pass band has an edge wavelength in the wavelength range of 800 nm to 1100 nm. In most cases, however, the optical filter 600 will be a band pass filter, preferably a narrow band pass filter. The transmission range typically has a mean wavelength in the wavelength range from 800 nm to 1100 nm. The pass band preferably has a full width at half maximum (FWHM) of less than 50 nm. Often the entire transmission range lies within the wavelength range from 800 nm to 1100 nm.
    In general, the optical filter 600 has a low shift in the mean wavelength with a change in the angle of incidence. With a change in the angle of incidence from 0 ° to 30 °, the mean wavelength of the transmission range is preferably shifted in terms of size by less than 20 nm. Accordingly, the optical filter 600 has a wide acceptance range for the angle of incidence. The optical filter 600 can have a variety of optical configurations. In general, the optical configuration of the optical filter 600 is optimized for a specific transmission range by selecting suitable numbers of layers, materials and / or thicknesses for the filter stack 610. Some exemplary optical filters described below include a Si: H / SiO »filter stack and a Ta2Os / SiO2 AR coating coated on opposing surfaces of a Borofloat glass substrate.
    With reference to FIG. 7 is a first exemplary optical filter a narrow band pass filter configured to pass light in a wavelength range of 829 nm to 859 nm over a range of incidence angles of 0 ° to 30 °. The first exemplary optical filter of FIG. 7 is identical to the first conventional optical filter of FIG. 1 and some properties of the optical filters are shown in FIG. 7A compared. Design data, d. H. Number of layers (from the substrate to the air), materials and thicknesses for the AR coating and
    71727
    the filter stack of the first exemplary filter is shown in FIG. 7B and 7C respectively. The filter stack comprises 48 layers, the AR coating comprises 5 layers, and the total coating thickness is approximately 5.7 µm.
    The transmission spectra 700 and 701 at angles of incidence of 0 ° and 30 ° are shown for the first exemplary optical filter in FIG. 7D applied. The first exemplary optical filter has a transmittance within the passband greater than 90% and a blockage outside the passband greater than OD3 over a wavelength range of 450 nm to 1050 nm. The transmission range has a mean wavelength of approximately 850 nm and an FWHM of approximately 46.5 nm at an angle of incidence of 0 °. If the angle of incidence changes from 0 ° to 30 °, the mean wavelength of the pass band shifts by about -12.2 nm.
    The first exemplary optical filter from FIG. 7 fewer layers and has a smaller total coating thickness than the first conventional optical filter from FIG. 1. In particular, the total coating thickness of the first exemplary optical filter is about a quarter of the total coating thickness of the first conventional optical filter. Therefore, the first exemplary optical filter is less expensive to manufacture and easier to structure. The first exemplary optical filter likewise advantageously has a smaller shift in the mean wavelength when the angle of incidence changes. Therefore, the passband of the first exemplary optical filter can be significantly narrower while accepting light over the same range of angles of incidence, thereby improving the signal-to-noise ratio of systems incorporating the first exemplary optical filter.
    The first exemplary optical filter can also be compared to an analog optical filter comprising a Si / SiO »filter stack, i.e. H. a filter stack comprising non-hydrogenated silicon layers instead of a Si: H / SiO »filter stack. The transmission spectra 710 and 711 at angles of incidence of 0 ° and 30 ° for this optical filter are shown in FIG. 7E applied. The transmittance within the passband of this optical filter is too low to be of any use.
    With reference to FIG. 8 is a second exemplary optical filter, a narrower band pass filter, configured to pass light having a wavelength of 825 nm over a range of angles of incidence from 0 ° to 20 °. The second exemplary optical filter of FIG. 8 is identical to the second conventional optical filter of FIG. 2 and some properties of the optical filters are shown in FIG. 8A compared. Design data for the AR coating of the second exemplary optical filter that is the same as that of the first exemplary optical filter is shown in FIG. 7B listed. Design data for the filter stack of the second exemplary optical filter are shown in FIG. 8B listed. The filter stack comprises 25 layers, the AR coating comprises 5 layers and the total coating thickness is about 3.3 µm.
    The transmission spectra 800 and 801 at angles of incidence of 0 ° and 20 ° are shown for the second exemplary optical filter in FIG. 8C applied. The second exemplary optical filter has a transmittance within the passband greater than 90% and a blockage outside the passband greater than OD2 over a wavelength range of 400 nm to 1100 nm. The transmission range has a mean wavelength of approximately 829 nm and an FWHM of approximately 29.6 nm at an angle of incidence of 0 °. When the angle of incidence changes from 0 ° to 20 °, the mean wavelength of the transmission range shifts by about -7.8 nm.
    Similar to the first exemplary optical filter from FIG. 7 comprises the second exemplary optical filter from FIG. 8 advantageously fewer layers, it has a smaller overall coating thickness and has a smaller shift in the mean wavelength when the angle of incidence changes than the second conventional optical filter from FIG. 2.
    The second exemplary optical filter can also be compared to an analog one
    optical filter that comprises a Si / SiO »filter stack instead of a Si: H / SiO» filter stack. The transmission spectra 810 and 811 at angles of incidence of 0 ° and 20 ° for this optical filter are shown in FIG. 8D applied. The transmittance within the passband of this optical filter is too low to be of any use.
    With reference to FIG. 9 is a third exemplary optical filter, a narrow band pass filter configured to pass light over a wavelength range of 845 nm to 865 nm over a range of incidence angles of 0 ° to 40 °. The third exemplary optical filter of FIG. 9 is similar to the third conventional optical filter of FIG. 3 comparable.
    Design data for the AR coating of the third exemplary optical filter, which is the same as that of the first exemplary optical filter, is shown in FIG. 7B listed. Design data for the filter stack of the third exemplary optical filter are shown in FIG. 9A listed. The filter stack comprises 29 layers, the AR coating comprises 5 layers, and the total coating thickness is approximately 4.8 µm.
    The transmission spectra 900 and 901 at angles of incidence of 0 ° and 40 ° are shown for the third exemplary optical filter in FIG. 9B applied. The third exemplary optical filter of FIG. 9 has essentially the same passband width as the third conventional optical filter from FIG. 3, but it has a somewhat lower degree of transmission within the transmission range. However, the third exemplary optical filter advantageously accepts light over a considerably larger angle of incidence range of 0 ° to 40 ° than the third conventional optical filter, which accepts light over an angle of incidence range of only 0 ° to 24 °. In other words, the third exemplary optical filter has a considerably wider angle of incidence acceptance range. The third exemplary optical filter likewise advantageously comprises fewer layers and has a smaller total coating thickness, approximately one fifth of the total coating thickness of the third conventional optical filter.
    As mentioned above, the optical filter of the present invention is particularly useful when it forms part of a sensor system such as a proximity sensor system, a 3-D imaging system, or a gesture recognition system. With reference to FIG. 10, a typical sensor system 1000 includes a light source 1010, an optical filter 1020 in accordance with the present invention, and a sensor 1030. It should be understood that other elements commonly included in a sensor system, such as optics, have been omitted for ease of illustration.
    The light source 1010 emits light with an emission wavelength in a wavelength range from 800 nm to 1100 nm. Typically, the light source 1010 emits modulated light, e.g. B. light pulses. The light source 1010 is preferably a light-emitting diode (LED), an LED arrangement, a laser diode or a laser diode arrangement. The light source 1010 emits light in the direction of a target 1040, which reflects the emitted light back in the direction of the sensor system 1000. If the sensor system 1000 is a gesture recognition system, the target 1040 is a user of the gesture recognition system.
    The optical filter 1020 is arranged to receive the emitted light after reflection by the target 1040. The optical filter 1020 has a transmission range which comprises the emission wavelength and at least partially overlaps with the wavelength range from 800 nm to 1100 nm. Typically, the optical filter 1020 is a bandpass filter, preferably a narrow bandpass filter as previously described. The optical filter 1020 transmits the emitted light from the light source 1010 while substantially blocking ambient light. In short, the optical filter 1020 receives the emitted light from the light source 1010 after being reflected by the target 1040, and transmits the emitted light to the sensor 1030.
    The sensor 1030 is arranged to receive the emitted light after passing through the optical filter 1020, i.e. H. the sensor 1030 is arranged behind the optical filter 1020. In some cases, the optical filter 1020 is formed directly on the sensor 1030 and is thus arranged on the sensor 1030. For example, the optical filter 1020 can be on
    Sensors, e.g. B. proximity sensors, coated and structured, e.g. B. by photolithography, in the processing at the wafer level (Wafer Level Processing, WLP).
    If the sensor system 1000 is a proximity sensor system, the sensor 1030 is a proximity sensor that detects the emitted light to detect a proximity of the target 1040 in accordance with known methods. When the sensor system 1000 is a 3D imaging system or a gesture recognition system, the sensor 1030 is a 3D image sensor, e.g. B. a charge-coupled device (CCD) chip or a complementary metal oxide semiconductor (CMOS) chip that detects the emitted light to provide a 3-D image of the target 1040 that is shown in some cases the user is. Typically, the 3D image sensor converts the optical information into an electrical signal for processing by a processing system, e.g. B. a chip with an application-specific integrated circuit (Application-Specific Integrated Circuit, ASIC) or a chip of a digital signal processor (Digital Signal Processor, DSP), according to known methods. For example, if the sensor system 1000 is a gesture recognition system, the processing system processes the 3D image of the user to recognize a gesture by the user.
    Further embodiments of the present invention include the following paragraphs:
    1. An optical filter having a pass band that at least partially overlaps a wavelength range of 800 nm to 1100 nm, the optical filter comprising: a filter stack comprising:
    a plurality of hydrogenated silicon layers each having a refractive index of greater than 3 over the wavelength range from 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range from 800 nm to 1100 nm; and
    a plurality of lower refractive index layers each having a refractive index of less than 3 over the wavelength range from 800 nm to 1100 nm, alternately stacked with the plurality of hydrogenated silicon layers.
    2. Optical filter according to Section 1, the hydrogenated silicon layers each having a refractive index of greater than 3.6 at a wavelength of 830 nm.
    3. Optical filter according to Paragraph 1, the hydrogenated silicon layers each having a refractive index of greater than 3.5 over the wavelength range from 800 nm to 1100 nm.
    4. Optical filter according to Paragraph 1, the hydrogenated silicon layers each having an absorption coefficient of less than 0.0004 over the wavelength range from 800 nm to 1100 nm.
    5. Optical filter according to Paragraph 1, the layers with a lower refractive index each having a refractive index of less than 2.5 over the wavelength range from 800 nm to 1100 nm.
    6. Optical filter according to Paragraph 1, wherein the layers with a lower refractive index consist of silicon dioxide (SiO »2), aluminum oxide (Al-Os), titanium dioxide (TiO2), niobium pentoxide (Nb2Os), tantalum pentoxide (Ta2Os) or a mixture thereof.
    7. Optical filter according to Paragraph 1, wherein the optical filter is a long-wave pass cut-off filter and wherein the pass band has an edge wavelength in the wavelength range from 800 nm to 1100 nm.
    8. The optical filter according to Paragraph 1, wherein the optical filter is a bandpass filter and wherein the pass band has a mean wavelength in the wavelength range from 800 nm to 1100 nm.
    10.
    11.
    12th
    13th
    14th
    15th
    Optical filter according to Paragraph 8, wherein the pass band has a half width at half maximum (FWHM) of less than 50 nm.
    Optical filter according to Paragraph 8, with a change in the angle of incidence from 0 ° to 30 °, the size of the mean wavelength shifting by less than 20 nm.
    A sensor system that includes:
    a light source for emitting light having an emission wavelength in a wavelength range from 800 nm to 1100 nm;
    the optical filter according to any one of paragraphs 1 to 10, wherein the pass band includes the emission wavelength, arranged to receive the emitted light, to pass the emitted light; and
    a sensor arranged to receive the emitted light after passing through the optical filter for detecting the emitted light.
    Sensor system according to Paragraph 11, wherein the optical filter is arranged on the sensor.
    Sensor system according to Paragraph 11, wherein the sensor system is a proximity sensor system, wherein the light source is for emitting light towards a target, wherein the optical filter is arranged to receive the emitted light after reflection by the target, and wherein the sensor is a Proximity sensor for detecting the emitted light to detect a proximity of the target is.
    The sensor system according to Paragraph 11, wherein the sensor system is a three-dimensional (3D) imaging system, wherein the light source is for emitting light towards a target, the optical filter being arranged to receive the emitted light after reflection by the target, and wherein the sensor is a 3D image sensor for detecting the emitted light to provide a 3D image of the target.
    Sensor system according to Paragraph 14, wherein the 3D imaging system is a gesture recognition system and wherein the target is a user of the gesture recognition system, further including a processing system for processing the 3D image of the user to recognize a gesture of the user.
    权利要求:
    Claims (15)
    [1]
    1. An optical filter having a transmission range that at least partially overlaps a wavelength range of 800 nm to 1100 nm, the optical filter comprising: a filter stack on a first side of a substrate, the filter stack alternating layers of hydrogenated silicon and Comprises layers of a lower refractive index material; wherein the optical filter has a transmittance of more than 90% within the transmission range.
    [2]
    2. The optical filter of claim 1, wherein the layers of hydrogenated silicon have an index of refraction greater than 3.6 at a wavelength of 830 nm.
    [3]
    3. Optical filter according to one of the preceding claims, wherein at least one of the layers of hydrogenated silicon is thicker than at least one of the layers of the material with a lower refractive index.
    [4]
    4. Optical filter according to one of the preceding claims, wherein the optical filter is a bandpass filter and wherein the pass band has a mean wavelength in the wavelength range from 800 nm to 1100 nm.
    [5]
    5. The optical filter according to claim 4, wherein when the angle of incidence changes from 0 ° to 30 °, the mean wavelength shifts in size by less than 20 nm.
    [6]
    6. The optical filter according to claim 5, wherein when the angle of incidence changes, the mean wavelength of the pass band shifts in size by less than 12.2 nm.
    [7]
    7. The optical filter of claim 4, wherein the pass band has a half width (FWHM) of less than 50 nm.
    [8]
    8. Optical filter according to one of the preceding claims, wherein the optical filter has a degree of blocking outside the transmission range of greater than OD2 over the wavelength range from 400 nm to 1100 nm.
    [9]
    9. Optical filter according to one of the preceding claims, wherein the hydrogenated silicon has an extinction coefficient of greater than 0.01 at wavelengths of less than 600 nm.
    [10]
    10. Optical filter according to one of the preceding claims, wherein the hydrogenated silicon has an extinction coefficient of greater than 0.05 at wavelengths of less than 650 nm.
    [11]
    11. The optical filter of any preceding claim further including a multilayer coating on a second, opposite side of the substrate.
    [12]
    12. The optical filter of claim 11, wherein the multilayer coating comprises at least one of silicon dioxide (SIO2) or tantalum pentoxide (Ta2Os).
    [13]
    13. The optical filter of claim 11 or claim 12, wherein the multilayer coating has a thickness of 0.1 µm to 1 µm.
    [14]
    14. An optical filter according to any preceding claim, wherein the optical filter has a total coating thickness of less than 10 µm.
    [15]
    15. A sensor system comprising: a light source for emitting light having an emission wavelength in a wavelength range of 800 nm to 1100 nm; the optical filter according to any one of claims 1 to 14, wherein the transmission region includes the emission wavelength, arranged to receive the emitted light, to transmit the emitted light; and
    a sensor arranged to receive the emitted light after passing through the optical filter for detecting the emitted light.
    14 sheets of drawings
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5472787A|1992-08-11|1995-12-05|The United States Of America As Represented By The Secretary Of The Navy|Anti-reflection and anti-oxidation coatings for diamond|
    US5398133A|1993-10-27|1995-03-14|Industrial Technology Research Institute|High endurance near-infrared optical window|
    US20030039847A1|2001-08-24|2003-02-27|General Electric Company|Optically coated article and method for its preparation|
    US2852980A|1948-12-27|1958-09-23|Schroder Hubert|Infra-red transmitting mirror|
    US2920002A|1952-06-25|1960-01-05|Auwarter Max|Process for the manufacture of thin films|
    FR1443311A|1965-05-11|1966-06-24|Centre Nat Rech Scient|Interference filters for the infrared region of the electromagnetic spectrum|
    US3620626A|1969-05-29|1971-11-16|Quantronix Corp|Proximity warning system for aircraft|
    US3528726A|1969-07-10|1970-09-15|Perkin Elmer Corp|Narrow band interference light filter|
    US3781111A|1972-03-16|1973-12-25|Nasa|Short range laser obstacle detector|
    US3996461A|1975-03-31|1976-12-07|Texas Instruments Incorporated|Silicon photosensor with optical thin film filter|
    US3976875A|1975-06-24|1976-08-24|Rca Corporation|Photodetector filter structure|
    JPH0233146B2|1982-06-12|1990-07-25|Konishiroku Photo Ind|DENSHISHASHIN KANKOTAI|
    JPS63113507A|1986-10-31|1988-05-18|Hitachi Ltd|Light guide and its production|
    US4854670A|1986-12-17|1989-08-08|Gte Products Corporation|Wide angle optical filters|
    US4835381A|1987-10-30|1989-05-30|Varo, Inc.|Wide field of view radiant energy receiver|
    US5605609A|1988-03-03|1997-02-25|Asahi Glass Company Ltd.|Method for forming low refractive index film comprising silicon dioxide|
    US5183700A|1990-08-10|1993-02-02|Viratec Thin Films, Inc.|Solar control properties in low emissivity coatings|
    EP0498884B1|1990-08-30|1997-11-12|Viratec Thin Films, Inc.|Process for producing optical coatings including niobium oxide by dc in-line reactive sputtering|
    US5245468A|1990-12-14|1993-09-14|Ford Motor Company|Anti-reflective transparent coating|
    US5258618A|1991-12-12|1993-11-02|General Electric Company|Infrared imager forming two narrow waveband images of the same object field|
    TW446637B|1996-05-28|2001-07-21|Mitsui Chemicals Inc|Transparent laminates and optical filters for displays using the same|
    US6249378B1|1997-02-28|2001-06-19|Nikon Corporation|Mirror and projection type display apparatus|
    US5882196A|1997-10-31|1999-03-16|Kert; Jimmie|Endodontic device and method for applying filler material to root canals|
    US6531230B1|1998-01-13|2003-03-11|3M Innovative Properties Company|Color shifting film|
    JP3290629B2|1998-06-22|2002-06-10|アルプス電気株式会社|Optical multilayer filter|
    GB9901858D0|1999-01-29|1999-03-17|Secr Defence|Optical filters|
    US6323942B1|1999-04-30|2001-11-27|Canesta, Inc.|CMOS-compatible three-dimensional image sensor IC|
    AU9698501A|2000-10-31|2002-05-15|3M Innovative Properties Co|Mems-based wavelength equalizer|
    TW528891B|2000-12-21|2003-04-21|Ind Tech Res Inst|Polarization-independent ultra-narrow bandpass filter|
    JP3887174B2|2001-01-24|2007-02-28|日本オプネクスト株式会社|Semiconductor light emitting device|
    US20020154387A1|2001-04-20|2002-10-24|Kenji Mori|Gain equalizer, collimator with gain equalizer and method of manufacturing gain equalizer|
    US20030008712A1|2001-06-04|2003-01-09|Playnet, Inc.|System and method for distributing a multi-client game/application over a communications network|
    US20030087121A1|2001-06-18|2003-05-08|Lawrence Domash|Index tunable thin film interference coatings|
    US7049004B2|2001-06-18|2006-05-23|Aegis Semiconductor, Inc.|Index tunable thin film interference coatings|
    EP1415191A1|2001-08-02|2004-05-06|Aegis Semiconductor|Tunable optical instruments|
    US7340077B2|2002-02-15|2008-03-04|Canesta, Inc.|Gesture recognition system using depth perceptive sensors|
    US7280214B2|2002-06-04|2007-10-09|Baker Hughes Incorporated|Method and apparatus for a high resolution downhole spectrometer|
    US6857746B2|2002-07-01|2005-02-22|Io2 Technology, Llc|Method and system for free-space imaging display and interface|
    US7194209B1|2002-09-04|2007-03-20|Xantech Corporation|Interference resistant infrared extension system|
    JP2005025020A|2003-07-04|2005-01-27|Seiko Epson Corp|Variable wavelength interference filter and method of manufacturing the same|
    US7408145B2|2003-09-23|2008-08-05|Kyle Holland|Light sensing instrument with modulated polychromatic source|
    US7567382B2|2003-12-18|2009-07-28|Daishinku Corporation|Optical filter|
    CN1278457C|2003-12-19|2006-10-04|禾昌兴业股份有限公司|Connector for thumb quick-flash memory card|
    CN101421641A|2004-02-12|2009-04-29|Api毫微制造及研究公司|Films for optical use and methods of making such films|
    US7133197B2|2004-02-23|2006-11-07|Jds Uniphase Corporation|Metal-dielectric coating for image sensor lids|
    US7901870B1|2004-05-12|2011-03-08|Cirrex Systems Llc|Adjusting optical properties of optical thin films|
    US7714265B2|2005-09-30|2010-05-11|Apple Inc.|Integrated proximity sensor and light sensor|
    US7879209B2|2004-08-20|2011-02-01|Jds Uniphase Corporation|Cathode for sputter coating|
    KR20070061530A|2004-09-09|2007-06-13|마츠시타 덴끼 산교 가부시키가이샤|Solid-state image sensor|
    KR100616670B1|2005-02-01|2006-08-28|삼성전기주식회사|Image sensor module of chip scale and method of fabricating the same|
    CN1892676B|2005-06-03|2010-05-12|沈洪泉|Apparatus and method for face/iris combination optical imagine|
    US7692746B2|2005-08-01|2010-04-06|Real D|Digitally-switchable bandpass filter|
    US7247835B2|2005-12-20|2007-07-24|Keng Yeam Chang|Optical navigation device, and method for manufacturing same|
    JP5160754B2|2006-01-31|2013-03-13|エルジーディスプレイカンパニーリミテッド|EL device|
    KR20080104309A|2006-02-27|2008-12-02|가부시키가이샤 니콘|Dichroic filter|
    JP4566930B2|2006-03-03|2010-10-20|富士通株式会社|Imaging device|
    JP2008020563A|2006-07-11|2008-01-31|Murakami Corp|Dielectric multilayer film filter|
    US7773302B2|2006-09-01|2010-08-10|Semrock, Inc.|Low cost filter for fluorescence systems|
    US20080105298A1|2006-11-02|2008-05-08|Guardian Industries Corp.|Front electrode for use in photovoltaic device and method of making same|
    JP5293186B2|2006-11-10|2013-09-18|住友電気工業株式会社|Si-O-containing hydrogenated carbon film, optical device including the same, and manufacturing method thereof|
    KR100801850B1|2006-11-13|2008-02-11|동부일렉트로닉스 주식회사|Image sensor and method of manufacturing the same|
    CN100451703C|2006-12-18|2009-01-14|武汉光迅科技股份有限公司|Tri-port depolarizing tunable optical filter based on TFF|
    US7993700B2|2007-03-01|2011-08-09|Applied Materials, Inc.|Silicon nitride passivation for a solar cell|
    US20080223436A1|2007-03-15|2008-09-18|Guardian Industries Corp.|Back reflector for use in photovoltaic device|
    EP2538248A1|2007-08-16|2012-12-26|Dow Corning Corporation|Dichroic filters formed using silicon carbide based layers|
    US7859754B2|2007-11-02|2010-12-28|Light Prescriptions Innovators, Llc|Wideband dichroic-filter design for LED-phosphor beam-combining|
    JP4598102B2|2008-05-28|2010-12-15|富士フイルム株式会社|Imaging device|
    JP5017193B2|2008-06-30|2012-09-05|パナソニック株式会社|Solid-state imaging device and camera|
    TWI430110B|2008-07-04|2014-03-11|Simulation System and Method of Virtual Human|
    TWI441047B|2008-07-10|2014-06-11|Pixart Imaging Inc|Sensing system|
    JP2010019822A|2008-07-10|2010-01-28|Pixart Imaging Inc|Sensing system|
    WO2010056538A1|2008-10-29|2010-05-20|Tim Maguire|An automated vessel puncture device using three-dimensional near infrared imaging and a robotically driven needle|
    KR101474351B1|2008-11-28|2014-12-18|제이에스알 가부시끼가이샤|Near infra red cut filter, and solid state imaging device and camera module comprising the same|
    JP5489669B2|2008-11-28|2014-05-14|Ｊｓｒ株式会社|Near-infrared cut filter and device using near-infrared cut filter|
    KR100992411B1|2009-02-06|2010-11-05|실리콘화일|Image sensor capable of judging proximity of a subject|
    EP2397873A4|2009-02-13|2012-09-05|Panasonic Corp|Infrared optical filter and method for producing same|
    KR101137887B1|2009-05-27|2012-04-26|다미폴리켐 주식회사|Multi-optical tunable band rejection filter based on encoded porous silicon and chemical sensor using them|
    US20100309555A1|2009-06-08|2010-12-09|Southwell William H|Narrow angle filter|
    KR101674036B1|2009-09-15|2016-11-08|가부시키가이샤 다이신쿠|Optical filter|
    CN101660131B|2009-09-28|2011-03-09|西安交通大学|Method for preparing hydrogenated silicon film by utilizing magnetron sputtering|
    JP5048795B2|2010-01-21|2012-10-17|浜松ホトニクス株式会社|Spectrometer|
    US20110232745A1|2010-03-23|2011-09-29|Deposition Sciences, Inc.|Antireflection coating for multi-junction solar cells|
    US9400503B2|2010-05-20|2016-07-26|Irobot Corporation|Mobile human interface robot|
    WO2012020380A1|2010-08-11|2012-02-16|Primesense Ltd.|Scanning projectors and image capture modules for 3d mapping|
    US20120056988A1|2010-09-07|2012-03-08|David Stanhill|3-d camera|
    CN102455779B|2010-10-15|2016-03-02|联想有限公司|Messaging device and method|
    US20120099188A1|2010-10-20|2012-04-26|AEgis Technologies Group, Inc.|Laser Protection Structures and Methods of Fabrication|
    GB201020024D0|2010-11-25|2011-01-12|St Microelectronics Ltd|Radiation sensor|
    JP5741283B2|2010-12-10|2015-07-01|旭硝子株式会社|Infrared light transmission filter and imaging apparatus using the same|
    US8598672B2|2011-01-26|2013-12-03|Maxim Integrated Products, Inc|Light sensor having IR cut interference filter with color filter integrated on-chip|
    US9077868B2|2011-03-03|2015-07-07|Robert Pilgrim|Method and device for viewing through fog|
    US9261753B2|2011-04-20|2016-02-16|The Regents Of The University Of Michigan|Spectrum filtering for visual displays and imaging having minimal angle dependence|
    TWI458131B|2011-06-27|2014-10-21|Lextar Electronics Corp|Semiconductor light-emitting device|
    WO2013015303A1|2011-07-28|2013-01-31|旭硝子株式会社|Optical member|
    US8871365B2|2012-02-28|2014-10-28|Headway Technologies, Inc.|High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications|
    TWI684031B|2012-07-16|2020-02-01|美商唯亞威方案公司|Optical filter and sensor system|
    CN203786316U|2014-04-10|2014-08-20|江苏北方湖光光电有限公司|Attenuation band-pass optical filter|
    CN203849441U|2014-05-28|2014-09-24|奥普镀膜技术（广州）有限公司|Multi-cavity optical filter|TWI684031B|2012-07-16|2020-02-01|美商唯亞威方案公司|Optical filter and sensor system|
    KR101858577B1|2012-10-10|2018-05-16|삼성전자주식회사|Imaging optical system and 3D image acquisition apparatus including the imaging optical system|
    US9448346B2|2012-12-19|2016-09-20|Viavi Solutions Inc.|Sensor device including one or more metal-dielectric optical filters|
    US10197716B2|2012-12-19|2019-02-05|Viavi Solutions Inc.|Metal-dielectric optical filter, sensor device, and fabrication method|
    US9568362B2|2012-12-19|2017-02-14|Viavi Solutions Inc.|Spectroscopic assembly and method|
    WO2014129333A1|2013-02-22|2014-08-28|旭硝子株式会社|Optical component|
    US20150192763A1|2014-01-06|2015-07-09|Flir Systems, Inc.|Coatings for use with long wavelength detection, optical system including the same, and associated methods|
    KR20210041134A|2014-06-18|2021-04-14|비아비 솔루션즈 아이엔씨.|Metal-dielectric optical filter, sensor device, and fabrication method|
    US10537269B2|2014-07-15|2020-01-21|Senseonics, Incorporated|Integrated optical filter system with low sensitivity to high angle of incidence light for an analyte sensor|
    CN112748488A|2015-01-23|2021-05-04|美题隆公司|Near infrared optical interference filter with improved transmission|
    EP3259626B1|2015-02-18|2021-04-21|Materion Corporation|Near infrared optical interference filters with improved transmission|
    US10162091B1|2015-10-16|2018-12-25|Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville|Silicon film optical filtering systems and methods of fabrication|
    US9923007B2|2015-12-29|2018-03-20|Viavi Solutions Inc.|Metal mirror based multispectral filter array|
    US9960199B2|2015-12-29|2018-05-01|Viavi Solutions Inc.|Dielectric mirror based multispectral filter array|
    US10170509B2|2016-02-12|2019-01-01|Viavi Solutions Inc.|Optical filter array|
    DE102016002597A1|2016-03-04|2017-09-07|Optics Balzers Ag|Broadband anti-reflection for the NIR range|
    US10168459B2|2016-11-30|2019-01-01|Viavi Solutions Inc.|Silicon-germanium based optical filter|
    JP2018120192A|2017-01-27|2018-08-02|京セラ株式会社|Infrared band-pass filter and optical semiconductor device|
    DE202017100512U1|2017-01-31|2017-02-09|Optics Balzers Ag|Optical filters and / or mirrors|
    US10914961B2|2017-02-13|2021-02-09|Viavi Solutions Inc.|Optical polarizing filter|
    CN106908888A|2017-03-06|2017-06-30|浙江水晶光电科技股份有限公司|A kind of low angle offset characteristic bandpass filter|
    DE102017004828B4|2017-05-20|2019-03-14|Optics Balzers Ag|Optical filter and method of making an optical filter|
    US10782460B2|2017-05-22|2020-09-22|Viavi Solutions Inc.|Multispectral filter|
    US11137527B2|2017-05-22|2021-10-05|Viavi Solutions Inc.|Mixed spacer multispectral filter|
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    US11169309B2|2019-10-08|2021-11-09|Kingray technology Co., Ltd.|Infrared bandpass filter having silicon aluminum hydride layers|
    GB2588135B|2019-10-09|2022-02-23|Kingray Tech Co Ltd|Infrared bandpass filter structure and infrared bandpass filter using the structure|
    DE102019127139B3|2019-10-09|2020-10-15|Kingray technology Co., Ltd.|Infrared band pass filter structure and infrared band pass filter with this infrared band pass filter structure|
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    CN112099124A|2020-09-25|2020-12-18|广州市佳禾光电科技有限公司|Dense light wave multiplexing optical filter|
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    申请号 | 申请日 | 专利标题
    US201261672164P| true| 2012-07-16|2012-07-16|
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